TOSHIBA 2SK3878 900V 9A N-Channel Power MOSFET in TO-247 Package

SKU: RZ24341257 Brand: Toshiba Category: General

₹ 154.79

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Bulk Discount Pricing

Quantity	Discount	Price / Unit
5 – 10	2%	₹ 151.69
11 – 30	3%	₹ 150.15
31 – 50	4%	₹ 148.60
51 – 100	5%	₹ 147.05

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Product Details

Brand Toshiba

Category General

Subcategory General

SKU RZ24341257

2SK3878 is a new generation high voltage MOSFET that employs an improved charge balance mechanism to achieve exceptional low on-resistance and lower gate charge performance. The cutting-edge technology has been designed to minimise conduction loss, provide improved switching performance, and withstand high dv/dt rates and avalanche energy. It is ideal for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.

Features

Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.)
High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Datasheet

Specifications

Model	2SK3878
Brand	TOSHIBA
Drain Source Voltage	900V
Drain Gate Voltage	900V
Gate Source Voltage	±30V
Drain Current	9A
Drain Power Dissipation	150W
Max. Channel Temperature	150°C
Package	TO-247
Mounting	Through Hole
Quantity	25
Country of Origin	China