MJE13009 NPN Silicon Transistor

SKU: RZ24338717 Category: General

₹ 27.14

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Quantity	Discount	Price / Unit
5 – 10	2%	₹ 26.60
11 – 30	3%	₹ 26.33
31 – 50	4%	₹ 26.05
51 – 100	5%	₹ 25.78

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Product Details

Category General

Subcategory General

SKU RZ24338717

The MJE13009 is made for use in inductive circuits that switch power at high voltages and speeds and in which fall time is crucial. They are very well suited for 115 and 220V switch mode applications, including as motor controls, solenoid/relay drivers, switching regulators, inverters, Deflection circuits, and motor controls. This device, which can store data even after the power is turned off, is a member of the family of metal insulator-oxide silicon (MIOS) transistors and is mostly utilized as a nonvolatile component of read-only memories. Silicon transistor made of metal nitride and oxide (MNOS)

Features

Its collector emitter voltage is 400V
Its packaging is TO-220
Its voltage Blocking capability is 700V
Its junction temperature is +150 degree centigrade

Specification

Model	MJE13009
Type	Silicon Transistor
Package	TO-220
VCEO	400V
Emitter Current	18A
Base current	6A
Total power dissipation	5.8W
Operating and Storage Temperature Range	-45°C TO 150°C
Country of Origin	China