4N80K5 4A 800V N-Channel Power MOSFET

SKU: RZ24338711 Brand: STMicroelectronics Category: ICs & Semiconductors

₹ 46.00

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Quantity	Discount	Price / Unit
5 – 10	2%	₹ 45.08
11 – 30	3%	₹ 44.62
31 – 50	4%	₹ 44.16
51 – 100	5%	₹ 43.70

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Product Details

Brand STMicroelectronics

Category ICs & Semiconductors

Subcategory Transistors

SKU RZ24338711

The 4N80 is a three-terminal silicon device with a current conduction capability of 4A, a fast switching speed, a low on-state resistance, an 800V breakdown voltage rating, and a maximum operating temperature of -40°C. 5 volts is the threshold voltage. They are intended to be used in applications. Switched-mode power supplies, DC-to-DC converters, PWM motor controls, bridge circuits, and general-purpose switching applications are examples of such devices. These high-voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Datasheet

Features

Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected

Specifications

Model	4N80K5
Brand	STMicroelectronics
Type	MOSFET
Maximum Drain Current \|Id\|	4A
Maximum Drain-Source Voltage \|Vds\|	800V
Polarity Type	N-Channel
Mounting Type	Through Hole
Package	TO-220
No. of Pins	03
Operation junction temperature	-55 to 150 ºC
Country of Origin	China