FDA59N30 N-Channel Enhancement Mode

SKU: RZ24338272 Brand: ON Semiconductor Category: General

₹ 175.95

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Bulk Discount Pricing

Quantity	Discount	Price / Unit
5 – 10	2%	₹ 172.43
11 – 30	3%	₹ 170.67
31 – 50	4%	₹ 168.91
51 – 100	5%	₹ 167.15

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Product Details

Brand ON Semiconductor

Category General

Subcategory General

SKU RZ24338272

FDA59N30 is an N-Channel enhancement mode This N-Channel enhancement mode power field effect transistor is made utilizing a planar stripe, DMOS process that is exclusive to Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. These devices are ideal for active power factor correction and high efficiency switching mode power supply.

Features

59A, 300V, RDS(on)= 0.056Ω@VGS= 10 V
Low gate charge ( typical 77 n C)
Low Cr s s( typical 80 pF)
Fast switching
Improved dv/dT capability

Specification

Model	FDA59N30
Type	MOSFET
Package	TO-3P
Brand	ONSEMI
Drain Current	236A
Repetitive avalanche energy	50mJ
Total power dissipation	500W
Operating and Storage Temperature Range	-55°C TO 150°C
Country of Origin	China