G4PF50WD IGBT MOSFET

SKU: RZ24337939 Category: General

₹ 368.00

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Bulk Discount Pricing

Quantity	Discount	Price / Unit
5 – 10	2%	₹ 360.64
11 – 30	3%	₹ 356.96
31 – 50	4%	₹ 353.28
51 – 100	5%	₹ 349.60

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Product Details

Category General

Subcategory General

SKU RZ24337939

G4PF50WD is an IGBT Ultrafast recovery diode mainly used in fast switching applications, and It's an electronic switch where we do not need manual movement for switching. Its recovery time is too fast this features make it used as a switching element. its operating voltage is 2.25V. And a collector current is 28A.

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Features

Low Power Loss
High-Efficiency
High Current Capability
Low Forward Voltage Drop
Avalanche Rugged Technology
GBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
High Surge Capability
Low IGBT conduction loss
Guarding for Overvoltage Protection

Specifications

Model	G4PF50WD
Package	TO-247AC
Type	IGBT MOSFET
Collector Current	28A
Max Lead Temperature	300 Degree Centigrade
Max Power Dissipation	200W
Gate to emitter voltage	20V
Operating Temperature	55 to 150° C
Country of Origin	China