Mitsubishi CT60AM-18F IGBT - 900V 60A High Voltage Current IGBT

SKU: RZ24341255 Category: ICs & Semiconductors

₹ 293.25

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Bulk Discount Pricing

Quantity	Discount	Price / Unit
5 – 10	2%	₹ 287.39
11 – 30	3%	₹ 284.45
31 – 50	4%	₹ 281.52
51 – 100	5%	₹ 278.59

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Product Details

Category ICs & Semiconductors

Subcategory Transistors

SKU RZ24341255

The CT60AM-18F is an Insulated Gate Bipolar Transistor with a VCES of 900V, an IC of 60A, and an integrated fast-recovery diode. The VCE Saturation Voltage of the CT60AM-18F is low, and there is little tail loss.

Features

VCES : 900 V
IC : 60 A
Integrated fast-recovery diode

Applications

Microwave oven
Electromagnetic cooking devices
Rice-cookers

Specifications

Model	CT60AM-18F
Brand	MITSUBISHI
Gate-emitter voltage	25V
Peak gate-emitter voltage	30V
Collector current	60A
Collector current (Pulse)	120A
Maximum Collector-Emitter Voltage \|Vce\|	900V
Emitter current	40A
Junction temperature	-40°C - +150°C
Package	TO3PL
Storage temperature	-40°C - +150°C
Country of Origin	China