ONSEMI 11N120 1200V 43A NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

SKU: RZ24341571 Category: ICs & Semiconductors

₹ 240.35

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Bulk Discount Pricing

Quantity	Discount	Price / Unit
5 – 10	2%	₹ 235.54
11 – 30	3%	₹ 233.14
31 – 50	4%	₹ 230.74
51 – 100	5%	₹ 228.33

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Product Details

Category ICs & Semiconductors

Subcategory Transistors

SKU RZ24341571

The 11N120 is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49303.

Datasheet

Features

43 A, 1200 V, TC = 25°C
1200 V Switching SOA Capability
Typical Fall Time: 340 ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance SPICE Model
This is Pb−Free Device

Specifications

Model	11N120BND
Brand	FSC/ONSEMI
Collector to Emitter Voltage	1200V
Max. Collector Current	43A
Max. Junction Temperature	150°C
Package	TO-247
Country of Origin	China