20N60A4D MOSFET

SKU: RZ24338547 Brand: ON Semiconductor Category: General

₹ 307.05

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Quantity	Discount	Price / Unit
5 – 10	2%	₹ 300.91
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Product Details

Brand ON Semiconductor

Category General

Subcategory General

SKU RZ24338547

A high voltage switching device with MOS gate that combines the finest qualities of MOSFETs and bipolar transistors is called 20N60A4D. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25 and 150°C, the significantly smaller on-state voltage loss scarcely varies somewhat. The IGBT being used is a TA49339 development type. The development type TA49372 diode is utilized in anti-parallel. It has designed by Fairchild. This IGBT is perfect for a variety of high voltage switching applications that operate at high frequencies and require minimal conduction losses. This gadget is designed to work with high frequency switch mode power supply.

Features

>100 kHz Operation 390 V, 20 A
200 kHz Operation 390 V, 12 A
600 V Switching SOA Capability
Typical Fall Time 55 ns at TJ= 125°C
Low Conduction Loss
Its a lead free device

Applications

Fast switching operations
UPS
SMPS

Pinout:-

1: Gate, 2: Collector, 3: Emitter

Specification

Product	20N60A4D
Brand	Fairchild
Type	Hyper fast diode
Mounting Type	Through hole
Pins	3
Maximum operating voltage	600V
Package	TO-247−3LD
Power dissipation	260W
Maximum lead temperature	260°C
Fall time	55nS
Frequency	200KHz
Junction Temperature	125 Degree C
Country of Origin	China