5N120BND Power MOSFET

SKU: RZ24338759 Category: General

₹ 236.90

Out of Stock

Buy 5N120BND Power MOSFET online, Order today to get instant delivery in all over india.

Bulk Discount Pricing

Quantity	Discount	Price / Unit
5 – 10	2%	₹ 232.16
11 – 30	3%	₹ 229.79
31 – 50	4%	₹ 227.42
51 – 100	5%	₹ 225.06

Out of Stock

You're on the list! We'll email you when this product is back in stock.

Enter your email to be notified when this product is available again.

Why Buy From Us

Fast Shipping

Quick dispatch on all orders

Secure Payment

100% safe transactions

GST Invoice

Available on all orders

Easy Returns

7-day return policy

Expert Support

Always here to help

Product Details

Category General

Subcategory General

SKU RZ24338759

IGBT designs that do not require a punch through are the HGTG5N120BND and HGTP5N120BND. They are brand-new IGBTs that are MOS gated for high voltage switching. IGBTs combine the greatest elements of bipolar transistors and MOSFETs. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. The IGBT in use is a TA49308 development type. The TA49058 development type diode is utilized (Part number RHRD6120). The IGBT is appropriate for a variety of high-voltage switching applications that operate at moderate frequencies and require minimal conduction losses, such as drivers for solenoids, relays, and contactors, AC and DC motor controllers, and power supplies.

Features

Its used in switching operation
1200V Switching SOA Capability
Short Circuit Rating
Low leakage current
It has the capability to improved dv/dT
100% avalanche energy rated

Specification

Model	5N120BND
Type	MOSFET
Package	TO-247
Forward current	21A
Reverse Voltage	1200V
Tc	25 Degree centigrade
Typical fall time	175nS
Operating and Storage Temperature Range	-55°C TO 150°C
Country of Origin	China