G20N60 N- Channel IGBT

SKU: RZ24338489 Brand: ON Semiconductor Category: General

₹ 193.20

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Quantity	Discount	Price / Unit
5 – 10	2%	₹ 189.34
11 – 30	3%	₹ 187.40
31 – 50	4%	₹ 185.47
51 – 100	5%	₹ 183.54

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Product Details

Brand ON Semiconductor

Category General

Subcategory General

SKU RZ24338489

G20N60 is a high voltage switching MOS gated device that combines the finest qualities of MOSFETs and bipolar transistors. The component combines a bipolar transistor's low on-state conduction loss with a MOSFET's high input impedance to provide the desired effect. Between 25 and 150 degrees Celsius, the significantly lower on-state voltage loss hardly varies slightly. The IGBT is utilized in anti-parallel with the RHRP3060 diode. Many high voltage switching applications running at moderate frequencies and requiring minimal conduction losses are excellent candidates for the IGBT.

Features

Highly reliable
40A, 600V at TC= 25oC
Short Circuit Rated
Low Conduction Loss
It has high capability to reduce power losses

Specification

Model	G20N60
Type	N-Channel IGBT
Peak Repetitive Reverse Voltage	600V
Package	TO-247
Brand name	Fairchild
Typical fall time	140nS
Maximum Power Dissipation	165W
Operating and Storage Temperature Range	-65 to 175 centigrade
Country of Origin	China