IR2101S 100mA MOSFET/IGBT SOIC-8 Package

SKU: RZ24335313 Category: General

₹ 86.25

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Quantity	Discount	Price / Unit
5 – 10	2%	₹ 84.53
11 – 30	3%	₹ 83.66
31 – 50	4%	₹ 82.80
51 – 100	5%	₹ 81.94

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Product Details

Category General

Subcategory General

SKU RZ24335313

Its IR2101S 100mA MOSFET/IGBT SOIC-8 Package‚ High voltage‚ high-speed power MOSFET and IGBT drivers with independent high and low side referenced output channels are the IR2101(S) and IR2102(S). Roughized monolithic construction is made possible by proprietary latch-immune CMOS and HVIC technologies. The rationale input is viable with standard CMOS or LSTTL yield‚ down to 3.3V rationale. The result drivers include a high heartbeat flow cushion stage intended for the least driver cross-conduction. The drifting channel can be utilized to drive an N-channel power MOSFET or IGBT in the high-side design which works up to 600 volts.

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