IRF3205 N-Channel Power MOSFET TO-220 Package - 55V 110A

SKU: RZ24341263 Category: General

₹ 50.30

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Quantity	Discount	Price / Unit
5 – 10	2%	₹ 49.29
11 – 30	3%	₹ 48.79
31 – 50	4%	₹ 48.29
51 – 100	5%	₹ 47.79

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Product Details

Category General

Subcategory General

SKU RZ24341263

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with a highly efficient and reliable device for use in various applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

Advanced Process Technology
Ultra-Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

Datasheet

Specifications

Model	IRF3205
Brand	International Rectifier
Type of Transistor	MOSFET
Type of Control Channel	N -Channel Maximum
No. of Pins	3
Maximum Power Dissipation (Pd)	150 W
Maximum Drain-Source Voltage \|Vds\|	55 V
Maximum Gate-Source Voltage \|Vgs\|	10V
Country of Origin	China