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2ED020I06-FI – 650 V Dual IGBT Half-Bridge Gate Driver IC

(5.00)6 Reviews
Available on backorder

516.35 (437.58 + tax)

  1.  Fully operational to ±650V
  2. Power supply operating range from 14 to 18 V
  3.  Gate drive currents of +1 A / –2 A
  4.  Matched propagation delay for both channels
  5.  High dV/dt immunity
  6.  Low power consumption
  • Estimated delivery time 2-4 days
  • (Subject to stock Availability)
SKU: rz24321482

Product details

The 2ED020I06-FI is a high voltage, high-speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. The floating high side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver, the 2ED020I06-FI is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. Both drivers are designed to drive an N-channel power MOSFET or IGBT which operate up to 650V.


  1.  Floating high side driver
  2.  Undervoltage lockout for both channels
  3.  3.3 V and 5 V TTL compatible inputs
  4. CMOS Schmitt-triggered inputs with pull-down
  5.  Non-inverting inputs
  6.  Interlocking inputs
  7.  Dedicated shutdown input with pull-up
  8.  RoHS compliant

Package Includes:

1 x 2ED020I06-FI – 650 V Dual IGBT Half-Bridge Gate Driver IC

Additional information

Input Voltage (V)

14 to 18

Length (mm)


Width (mm)


Height (mm)


Weight (gm)


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