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2N7000 Small Signal N-MOSFET 60V 200mA TO-92

Original price was: ₹8.14.Current price is: ₹6.74. (Including tax)

Discount per Bulk Quantity

QuantityDiscountPrice
5 - 105%6.41 (Including tax)
11 - 208%6.20 (Including tax)
21 - 4010%6.06 (Including tax)
41 - 10012%5.93 (Including tax)

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Description
The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance.

Features:

  • Small signal N-Channel MOSFET.
  • Drain-Source Voltage (VDS) is 60V.
  • Continuous Drain Current (ID) is 200mA.
  • Pulsed Drain Current (ID-peak) is 500mA.
  • Gate threshold voltage (VGS-th) is 3V.
  • Gate-Source Voltage is (VGS) is ±20V.
Specifications:
Part Number2N7000 
TypeSmall signal N-Channel MOSFET
Drain Source Voltage60V
Gate Source Voltage20V
Continuous Drain Current200mA
Drain Gate Voltage60V
Power Dissipation 350mW
Package TO-92
Country of OriginChina
Additional information
Weight 200 kg
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