2N7000 Small Signal N-MOSFET 60V 200mA TO-92

SKU: rz24345051
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Description

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance.

Features:

  • Small signal N-Channel MOSFET.
  • Drain-Source Voltage (VDS) is 60V.
  • Continuous Drain Current (ID) is 200mA.
  • Pulsed Drain Current (ID-peak) is 500mA.
  • Gate threshold voltage (VGS-th) is 3V.
  • Gate-Source Voltage is (VGS) is ±20V.
Specifications:
Part Number 2N7000 
Type Small signal N-Channel MOSFET
Drain Source Voltage 60V
Gate Source Voltage 20V
Continuous Drain Current 200mA
Drain Gate Voltage 60V
Power Dissipation  350mW
Package  TO-92
Country of Origin China