G4PC50FD IGBT with Ultrafast Recovery Diode

SKU: RZ24337941 Category: General

₹ 348.45

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Quantity	Discount	Price / Unit
5 – 10	2%	₹ 341.48
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Product Details

Category General

Subcategory General

SKU RZ24337941

G4PC50FD is an insulated gate bipolar transistor with ultrafast recovery time. Just because of its recovery time, it's used in fast switching applications and There are huge applications of power MOSFET in SMPS and UPS. Snubber, free-wheeling diode and general switching applications.

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Features

Low Power Loss
High-Efficiency
High Current Capability
High Surge Capability
Guarding for Overvoltage Protection
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
It has a soft recovery time
It's used in switching applications

Specifications

Model	G4PC50FD
Package	TO-247AC
Type	IGBT MOSFET
Voltage	600V
Pulse collector Current	280A
Max Lead Temperature	300 Degree Centigrade
Power dissipation	200W
Brand	International rectifier
Operating Temperature	55 to 150° C
Country of Origin	China