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30N60A4D N-Channel IGBT
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50N06L N-Channel MOSFET

Original price was: ₹32.02.Current price is: ₹25.79. (Including tax)

Discount per Bulk Quantity

QuantityDiscountPrice
5 - 105%24.50 (Including tax)
11 - 208%23.72 (Including tax)
21 - 4010%23.21 (Including tax)
41 - 10012%22.69 (Including tax)

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Description

 50N06L N-Channel enhancement mode power field effect transistors were created to use the exclusive planar stripe DMOS process developed by Fairchild. This cutting-edge technology has been specifically designed to reduce on-state resistance, deliver more excellent switching performance, and withstand high-energy pulses in the avalanche and commutation modes. These components are ideal for low-voltage uses, including automotive, DC/DC converters, and high-efficiency switching for power management in mobile and battery-powered goods.

Features

  • Low gate charge ( typical 31 n C)

  • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V

  • Fast switching
  • 175°C maximum junction temperature rating
  • 100% avalanche tested
Specifications
Model50NO6L
TypeMOSFET
PackageTO-220
VDSS60V
VGSS25V
Drain current50A
Power dissipation150W
Channel temperature175-degree centigrade
Country of OriginChina
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