GW30NC60WD Ultra fast switching power MOSFET
GW30NC60WD Ultra fast switching power MOSFET 142.11161.49 (Including tax)
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FQPF4N80 2A, 800V N-Channel MOSFET
FQPF4N80 2A,800V N-Channel MOSFET 22.9326.06 (Including tax)

G20N60 N- Channel IGBT

Original price was: ₹227.98.Current price is: ₹184.56. (Including tax)

Discount per Bulk Quantity

QuantityDiscountPrice
5 - 105%175.32 (Including tax)
11 - 208%169.79 (Including tax)
21 - 4010%166.10 (Including tax)
41 - 10012%162.41 (Including tax)

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Description

G20N60 is a high voltage switching MOS gated device that combines the finest qualities of MOSFETs and bipolar transistors. The component combines a bipolar transistor’s low on-state conduction loss with a MOSFET’s high input impedance to provide the desired effect. Between 25 and 150 degrees Celsius, the significantly lower on-state voltage loss hardly varies slightly. The IGBT is utilized in anti-parallel with the RHRP3060 diode. Many high voltage switching applications running at moderate frequencies and requiring minimal conduction losses are excellent candidates for the IGBT.

Features

  • Highly reliable
  • 40A, 600V at TC= 25oC
  • Short Circuit Rated
  • Low Conduction Loss
  • It has high capability to reduce power losses

Specification
ModelG20N60 
TypeN-Channel IGBT
Peak Repetitive Reverse Voltage600V
PackageTO-247
Brand nameFairchild
Typical fall time140nS
Maximum Power Dissipation165W
Operating and Storage Temperature Range-65 to 175 centigrade
Country of OriginChina

 

 

 

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