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G33N50EF Power MOSFET with Fast Body Diode

Original price was: ₹297.19.Current price is: ₹238.84. (Including tax)

Discount per Bulk Quantity

QuantityDiscountPrice
5 - 105%226.90 (Including tax)
11 - 208%219.73 (Including tax)
21 - 4010%214.94 (Including tax)
41 - 10012%210.17 (Including tax)

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Description

G33N50EF is a power MOSFET with a Fast body diode; It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. Its fast body diode uses E series technology; its drain-source voltage is 650V.

Applications

  •  Telecommunications – Server and telecom power supplies 
  • Lighting – High-intensity discharge (HID) – Light emitting diodes (LEDs) 
  • Consumer and computing – ATX power supplies 
  • Industrial – Welding – Battery chargers
  • Renewable energy – Solar (PV inverters)
  • Switch mode power suppliers (SMPS)
  • Applications using the following topologies – LLC – Phase shifted bridge (ZVS) – 3-level inverter – AC/DC bridge

Features

  • High-speed switching Low input capacitance (Ciss)
  • Low on-resistance
  • No secondary breakdown
  • Low driving power
  • Reduced switching and conduction losses
  • Avalanche energy rated (UIS)
Specification
ModelG33N50EF 
Type MOSFET
PackageTO-247AC
Continuous drain current (Id)21A
Pulsed drain current (Id pulse)100A
Drain-Source Breakdown Voltage600V
Max. power dissipation (Pd)278W
Storage temperature range-55~150 (degree C)
Country of OriginChina
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