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6 Core 16/.200mm Black Shielded Round Cable (10 Meter)
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G4PC50FD IGBT with Ultrafast Recovery Diode

Original price was: ₹411.17.Current price is: ₹331.10. (Including tax)

Discount per Bulk Quantity

QuantityDiscountPrice
5 - 105%314.55 (Including tax)
11 - 208%304.61 (Including tax)
21 - 4010%298.00 (Including tax)
41 - 10012%291.37 (Including tax)

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Description

G4PC50FD  is an insulated gate bipolar transistor with ultrafast recovery time. Just because of its recovery time, it’s used in fast switching applications and There are huge applications of power MOSFET in SMPS and UPS. Snubber, free-wheeling diode and general switching applications.

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Features

  • Low Power Loss
  • High-Efficiency
  • High Current Capability
  • High Surge Capability
  • Guarding for Overvoltage Protection
  • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode)
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 
  • It has a soft recovery time
  • It’s used in switching applications
Specifications
ModelG4PC50FD 
PackageTO-247AC
TypeIGBT MOSFET
Voltage600V
Pulse collector Current280A
Max Lead Temperature300 Degree Centigrade
Power dissipation200W
BrandInternational rectifier
Operating Temperature55 to 150° C
Country of OriginChina
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