Product details
The IRFB7545PBF is an N-channel HEXFET Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It is appropriate for battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters, and so on.
Features
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Lead-free, RoHS compliant
Applications
- Brushed motor drive applications
- BLDC motor drive applications
- Battery-powered circuits
- Half-bridge and full-bridge topologies
- Synchronous rectifier applications
- Resonant mode power supplies
- OR-ing and redundant power switches
- DC/DC and AC/DC converters
- DC/AC inverters
Specifications
| Model | IRFB7545 |
| Brand | Infineon |
| Transistor Type | MOSFET |
| Type of Control Channel | N-Type |
| Max. Drain-Source Voltage | 60V |
| Max. Gate-Source Voltage | 20V |
| Max. Gate-Threshold Voltage | 3.7V |
| Max. Drain Current | 95A |
| Drain-Source Capacitance | 370pF |
| Max. Operating Junction Temperature | 175°C |
| Rise Time | 72ns |
| Max. Drain-Source On-state Resistance | 0.0059 ohm |
| Max. Power Dissipation | 125W |
| Package | TO-220 |
| Mounting | Through Hole |
| Country of Origin | China |
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