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₹257.84 (Including tax)
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Quantity | Discount | Price |
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5 - 10 | 5% | ₹244.94 (Including tax) |
11 - 20 | 8% | ₹237.20 (Including tax) |
21 - 40 | 10% | ₹232.05 (Including tax) |
41 - 100 | 12% | ₹226.90 (Including tax) |
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This NGTB40N65FL2WG IGBT Trench Field Stop 650 V 80 A 366 W Through Hole TO-247-3‚ Insulated Gate Bipolar Transistor (IGBT) has a durable and cost-effective Field Stop II Trench structure and delivers exceptional performance in demanding switching applications‚ with both low and high power consumption. on-state voltage and little switching loss. The IGBT is ideal for use in UPS and photovoltaic applications. A soft and quick copackaged free-wheeling diode with a low forward voltage is included in the device.
Features:
Specifications | |
---|---|
Part Number | NGTB40N65FL2WG |
Operating Temperature Range | -55 to 175 |
Mounting Style | Through Hole |
Power Dissipation | 366W |
Current | 80A |
Voltage | 650V |
Type | IGBT |
Package | TO-247-3 |
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