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NGTB40N65FL2WG 650V 80A IGBT TO-247-3 Package

257.84 (Including tax)

Discount per Bulk Quantity

QuantityDiscountPrice
5 - 105%244.94 (Including tax)
11 - 208%237.20 (Including tax)
21 - 4010%232.05 (Including tax)
41 - 10012%226.90 (Including tax)

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Description

This NGTB40N65FL2WG IGBT Trench Field Stop 650 V 80 A 366 W Through Hole TO-247-3‚ Insulated Gate Bipolar Transistor (IGBT) has a durable and cost-effective Field Stop II Trench structure and delivers exceptional performance in demanding switching applications‚ with both low and high power consumption. on-state voltage and little switching loss. The IGBT is ideal for use in UPS and photovoltaic applications. A soft and quick copackaged free-wheeling diode with a low forward voltage is included in the device.

Features:

  • Its soft fast reverse recovery diode
  • Its maximum temperature 175 Degree Centigrade
  • Its switching speed is High
Specifications
Part NumberNGTB40N65FL2WG
Operating Temperature Range-55 to 175
Mounting StyleThrough Hole
Power Dissipation366W
Current80A
Voltage650V
TypeIGBT
PackageTO-247-3
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