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₹101.77 (Including tax)
Discount per Bulk Quantity
Quantity | Discount | Price |
---|---|---|
5 - 10 | 5% | ₹96.68 (Including tax) |
11 - 20 | 8% | ₹93.63 (Including tax) |
21 - 40 | 10% | ₹91.61 (Including tax) |
41 - 100 | 12% | ₹89.56 (Including tax) |
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Its IR2101S 100mA MOSFET/IGBT SOIC-8 Package‚ High voltage‚ high-speed power MOSFET and IGBT drivers with independent high and low side referenced output channels are the IR2101(S) and IR2102(S). Roughized monolithic construction is made possible by proprietary latch-immune CMOS and HVIC technologies. The rationale input is viable with standard CMOS or LSTTL yield‚ down to 3.3V rationale. The result drivers include a high heartbeat flow cushion stage intended for the least driver cross-conduction. The drifting channel can be utilized to drive an N-channel power MOSFET or IGBT in the high-side design which works up to 600 volts.
Features:
Specifications | |
---|---|
Part Number | IR2101S |
Mounting Style | SMD |
Current | 100mA |
Voltage | 600V |
Type | MOSFET |
Package | SOIC-8 |
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