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IR2101S 100mA MOSFET/IGBT SOIC-8 Package

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86.25 (Including tax)

Discount per Bulk Quantity

5 - 105%81.94 (Including tax)
11 - 2010%77.63 (Including tax)
21 - 4015%73.31 (Including tax)
41 - 10020%69.00 (Including tax)
  • Estimated delivery time 2-4 days
  • (Subject to stock Availability)

Product details

Its IR2101S 100mA MOSFET/IGBT SOIC-8 Package‚ High voltage‚ high-speed power MOSFET and IGBT drivers with independent high and low side referenced output channels are the IR2101(S) and IR2102(S). Roughized monolithic construction is made possible by proprietary latch-immune CMOS and HVIC technologies. The rationale input is viable with standard CMOS or LSTTL yield‚ down to 3.3V rationale. The result drivers include a high heartbeat flow cushion stage intended for the least driver cross-conduction. The drifting channel can be utilized to drive an N-channel power MOSFET or IGBT in the high-side design which works up to 600 volts.


  • Floating channel designed for bootstrap operation
  • Fully operational to +600V
  • Tolerant to negative transient voltage
  • dV/dt immune
  • Gate drive supply range from 10 to 20V
Part Number IR2101S
Mounting Style SMD
Current 100mA
Voltage 600V
Package SOIC-8
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