30N60A4D N-Channel IGBT

SKU: RZ24338536 Brand: ON Semiconductor Category: General

₹ 345.00

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Bulk Discount Pricing

Quantity	Discount	Price / Unit
5 – 10	2%	₹ 338.10
11 – 30	3%	₹ 334.65
31 – 50	4%	₹ 331.20
51 – 100	5%	₹ 327.75

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Product Details

Brand ON Semiconductor

Category General

Subcategory General

SKU RZ24338536

30N60A4D is a MOS gated high voltage switching device that combines the finest qualities of MOSFETs and bipolar transistors. This component combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25oC and 150oC, the significantly smaller on-state voltage drop only varies somewhat. The IGBT used is of development type TA49343. The TA49373 development type diode is the one employed in anti-parallel.
This IGBT is perfect for many high-frequency, high-voltage switching applications where minimal conduction losses are crucial. For high frequency switch mode power supplies, this device has been designed.

Features

Its frequency range is <100KHz
It operates on 390V
Its forward operating current is 30A at 100KHz frequency
Its operating voltage is 390V and the current is 18A at 200KHz frequency
Its typical fall time is 60nS
It has low conduction loss

Specification

Part number	30N60A4D
Type	IGBT
Package	TO-247
Brand	Fairchild
Power dissipation	463W
Maximum temperature for soldering	260 degree centigrade
Diode forward voltage	2.5V
Country of Origin	China