G33N50EF Power MOSFET with Fast Body Diode

SKU: RZ24337868 Category: General

₹ 251.85

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Bulk Discount Pricing

Quantity	Discount	Price / Unit
5 – 10	2%	₹ 246.81
11 – 30	3%	₹ 244.29
31 – 50	4%	₹ 241.78
51 – 100	5%	₹ 239.26

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Product Details

Category General

Subcategory General

SKU RZ24337868

G33N50EF is a power MOSFET with a Fast body diode; It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. Its fast body diode uses E series technology; its drain-source voltage is 650V.

Applications

Telecommunications - Server and telecom power supplies
Lighting - High-intensity discharge (HID) - Light emitting diodes (LEDs)
Consumer and computing - ATX power supplies
Industrial - Welding - Battery chargers
Renewable energy - Solar (PV inverters)
Switch mode power suppliers (SMPS)
Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge

Features

High-speed switching Low input capacitance (Ciss)
Low on-resistance
No secondary breakdown
Low driving power
Reduced switching and conduction losses
Avalanche energy rated (UIS)

Specification

Model	G33N50EF
Type	MOSFET
Package	TO-247AC
Continuous drain current (Id)	21A
Pulsed drain current (Id pulse)	100A
Drain-Source Breakdown Voltage	600V
Max. power dissipation (Pd)	278W
Storage temperature range	-55~150 (degree C)
Country of Origin	China