IRFIZ24N Power MOSFET

SKU: RZ24338718 Category: General

₹ 46.58

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Bulk Discount Pricing

Quantity	Discount	Price / Unit
5 – 10	2%	₹ 45.64
11 – 30	3%	₹ 45.18
31 – 50	4%	₹ 44.71
51 – 100	5%	₹ 44.25

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Product Details

Category General

Subcategory General

SKU RZ24338718

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Full eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. This is mounted to a heatsink using a single clip or by a single screw fixing.

Features

It has isolated package
Avalanche energy rated
High voltage isolation 2.5KVRMS
Sink to lead creepage distance 4.8mm
It has small size

Specification

Model	IRFIZ24N
Type	Power MOSFET
Package	TO-220Fullpak
Peak diode recovery	5V/ns
Avalanche current	10A
Pulse drain current	68A
Total power dissipation	29W
Operating and Storage Temperature Range	-55°C TO 175°C
Country of Origin	China