IRFP250N Power MOSFET

SKU: RZ24338752 Category: General

₹ 92.00

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Quantity	Discount	Price / Unit
5 – 10	2%	₹ 90.16
11 – 30	3%	₹ 89.24
31 – 50	4%	₹ 88.32
51 – 100	5%	₹ 87.40

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Product Details

Category General

Subcategory General

SKU RZ24338752

International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing techniques to produce extraordinarily low on-resistance per silicon area. This feature gives the designer an exceptionally efficient and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. For commercial and industrial applications, where greater power levels limit the usage of TO-220 devices, the TO-247 package is preferable. Because of its isolated mounting hole, the TO-247 is similar to the older TO-218 package but is superior.

Features

Its used in switching operation
Its maximum operating temperature 175 degree centigrade
Low leakage current
It has the capability to improved dv/dT
100% avalanche energy rated

Specification

Model	IRFP250N
Type	MOSFET
Package	TO-220-FL
VDSS	200V
Drain current	30A
Pulse drain current	120A
Total power dissipation	214W
Operating and Storage Temperature Range	-55°C TO 150°C
Country of Origin	China